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| Composite Transistors XP6435 Silicon PNP epitaxial planer transistor Unit: mm 0.425 1.250.1 0.425 0.20.05 For high-frequency amplification 2.10.1 0.65 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.00.1 s Features 0.65 1 2 3 6 5 4 0.90.1 q 2SA1022 x 2 elements 0.70.1 0 to 0.1 0.20.1 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg (Ta=25C) Ratings -30 -20 -5 -30 150 150 -55 to +150 Unit V V V mA mW C 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Collector (Tr1) EIAJ : SC-88 S-Mini Type Package (6-pin) Marking Symbol: 7W Internal Connection 1 Tr1 6 5 4 C 2 3 Tr2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance *1 (Ta=25C) Symbol ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VBE fT NF Zrb Cre Conditions VCB = -10V, IE = 0 VCE = -20V, IB = 0 VEB = -5V, IC = 0 VCB = -10V, IE = 1mA VCB = -10V, IE = 1mA IC = -10mA, IB = -1mA VCE = -10V, IC = -1mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 1mA, f = 5MHz VCB = -10V, IE = 1mA, f = 2MHz VCB = -10V, IE = 1mA, f = 10.7MHz 150 2.8 22 1.2 50 0.5 0.99 - 0.1 - 0.7 V V MHz dB pF min typ max - 0.1 -100 -10 220 Unit A A A Ratio between 2 elements 0.12 -0.02 s Basic Part Number of Element 0.2 +0.05 1 Composite Transistors PT -- Ta 250 XP6435 IC -- VCE -30 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 Total power dissipation PT (mW) Collector current IC (mA) 200 -25 -30 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 Ta=75C 25C -25C -20 IB=-250A -200A 150 -15 -150A -100A -50A 100 -10 50 -5 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -1 -3 -10 -30 -100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) hFE -- IC 120 6 Cob -- VCB Collector output capacitance Cob (pF) VCE=-10V f=1MHz IE=0 Ta=25C Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 5 IC=-1mA f=10.7MHz Ta=25C 4 Forward current transfer ratio hFE 100 Ta=75C 5 80 25C -25C 4 3 60 3 2 40 2 1 20 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 0 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -2 -3 -5 -10 -20 -30 -50 -100 Collector current IC (mA) Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) fT -- I E 600 VCB=-10V Ta=25C 24 PG -- IC VCE=-10V f=100MHz Ta=25C 5 NF -- IE VCB=-10V f=100MHz Ta=25C 4 Transition frequency fT (MHz) 500 20 400 16 Noise figure NF (dB) -1 -3 -10 -30 -100 Power gain PG (dB) 3 300 12 2 200 8 100 4 1 0 0.1 0.3 1 3 10 30 100 0 -0.1 -0.3 0 0.1 0.2 0.3 0.5 1 2 3 5 10 Emitter current IE (mA) Collector current IC (mA) Emitter current IE (mA) 2 |
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